| タイトル | Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices |
| 著者（英） | Vermeire, B.; Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 2007-06-23 |
| 言語 | eng |
| 内容記述 | We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright |
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