| タイトル | Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration |
| 著者（英） | Doyle, Barney; Greenwell, Robert; Vizkelethy, Gyorgy; Chen, Yuan; Blalock, Benjamin; Miyahira, Tetsuo; Mojarradi, Mohammad M; Scheik, Leif; Laird, Jamie S. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 2006-01-01
2006 |
| 言語 | eng |
| 内容記述 | The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | Copyright |
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