タイトル | Indium phosphide boudle heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz |
著者(英) | Siegel, Peter; Velebir, Jim; Samoska, Lorene; Fung, Andy |
発行日 | 2005-10-01 |
言語 | eng |
内容記述 | |
権利 | Copyright |
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