| タイトル | The effect of integration of Strontium-Bismuth-Tantalate capacitors onto SOI wafers |
| 著者（英） | Ohno, Morifumo; Joshi, Vikram; Strauss, Karl; Ida, Jiro; Nagatomo, Yoshiki |
| 発行日 | 2005-10-01 |
| 言語 | eng |
| 内容記述 | We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors. |
| 権利 | Copyright |
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