| タイトル | Excitation Spectroscopy as a Tool of Microelectronics Reliability |
| 著者（英） | Kayali, S.; Kim, Q. |
| 発行日 | 1999-10-26 |
| 言語 | eng |
| 内容記述 | The main objective of this task was to experimentally determine the feasibility of using a non-contact IR emission spectroscopy technique to measure the hot spot channel temperature of sub-micron GaAs metal semiconductor field effect transistor gate during operation. |
| 権利 | Copyright |
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