| タイトル | Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate |
| 著者（英） | Qui, Y.; Keo, S.; Uhl, D. |
| 発行日 | 2003-11-19 |
| 言語 | eng |
| 内容記述 | Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change. |
| NASA分類 | Physics (General) |
| 権利 | Copyright |
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