| タイトル | (abstract) Mechanism of Selective Porosification at Heterojunctions in Group IV Multilayer Structures |
| 著者（英） | Pike, W. T.; Kesendzov, A.; George, T.; Jones, E. W.; Fathauer, R. W. |
| 発行日 | 1993-10-10 |
| 言語 | eng |
| 内容記述 | Highly selective porosification of SiGe or Ge layers is observed in multilayer Si/SiGe or Si/Ge structures grown on (100)Si. These alternating porous/nonporous structures could potentially be used to fabricate light-emitting devices. The etch-selectivity appears to be dominated by band-structure effects and other factors such as lattice strain and electrochemical potential differences play a minor role. Additional structures and electrolytic etching are being examined to confirm these results. |
| 権利 | Copyright |
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