タイトル | Compiled Data On Single-Event Effects Caused By Heavy Ions |
著者(英) | Coss, James R.; Nichols, Donald K.; Schwartz, Harvey R. |
著者所属(英) | Jet Propulsion Lab., California Inst. of Tech. |
発行日 | 1996-04-01 |
言語 | eng |
内容記述 | Report presents test data on susceptibility of new set of digital integrated circuits and other semiconductor products to single-event effects (soft errors and latchups) caused by heavy ions incident at high energies. Data used to develop generalizations for protecting electronic equipment from single-event effects. In some cases, tested parts selected as candidates for use in specific applications. |
NASA分類 | ELECTRONIC COMPONENTS AND CIRCUITS |
レポートNO | 96B10190 NPO-19718 |
権利 | No Copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/304800 |