| タイトル | Using BEEM To Probe Strains In Semiconductors |
| 著者（英） | Milliken, Autumn M.; Bell, L. Douglas; Kaiser, William J.; Manion, Stephen J. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1996-04-01 |
| 言語 | eng |
| 内容記述 | Ballistic-electron-emission microscopy (BEEM) useful in determining strains in semiconductors under some conditions. More specifically, BEEM is variant of scanning tunneling microscopy and sensitive to electronic structure of probed material. In present approach, BEEM used to obtain data on those aspects of variations in electronic structures related to variations in strains. Then by use of mathematical modeling of relationships between electronic structures and strains, variations in strains deduced from BEEM data. |
| NASA分類 | PHYSICAL SCIENCES |
| レポートNO | 96B10173
NPO-19608 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/304817 |
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