| タイトル | Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy |
| 著者（英） | Ni, W.-X.; Sundgren, J.-E.; Hansson, G. V.; Greene, J. E.; Markert, L. C. |
| 著者所属（英） | NASA Headquarters |
| 発行日 | 1991-01-01
1991 |
| 言語 | eng |
| 内容記述 | Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments. |
| NASA分類 | METALLIC MATERIALS |
| レポートNO | 95A79361 |
| 権利 | Copyright |
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