| タイトル | Improved Ferroelectric Memories With Nondestructive Readout |
| 著者（英） | Thakoor, Anil P.; Thakoor, Sarita |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1994-11-01 |
| 言語 | eng |
| 内容記述 | Ferroelectric memories with enhanced photoresponse leading to improved nondestructive optoelectronic readout and lower power demand proposed. Memories improved versions of devices described in "Rapid, Nondestructive Readout From Ferroelectric Memory" (NPO-18551). In proposed application, array of nonvolatile ferroelectric memory cells fabricated by standard very-large-scale integrated-circuit techniques and flip-bonded onto similarly fabricated array of semiconductor lasers, {see "Optically Addressable, Ferroelectric Memory With NDRO" (NPO-18573)}. |
| NASA分類 | ELECTRONIC COMPONENTS AND CIRCUITS |
| レポートNO | 94B10618
NPO-19033 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/312982 |
