タイトル | Improved Ferroelectric Memories With Nondestructive Readout |
著者(英) | Thakoor, Anil P.; Thakoor, Sarita |
著者所属(英) | Jet Propulsion Lab., California Inst. of Tech. |
発行日 | 1994-11-01 |
言語 | eng |
内容記述 | Ferroelectric memories with enhanced photoresponse leading to improved nondestructive optoelectronic readout and lower power demand proposed. Memories improved versions of devices described in "Rapid, Nondestructive Readout From Ferroelectric Memory" (NPO-18551). In proposed application, array of nonvolatile ferroelectric memory cells fabricated by standard very-large-scale integrated-circuit techniques and flip-bonded onto similarly fabricated array of semiconductor lasers, {see "Optically Addressable, Ferroelectric Memory With NDRO" (NPO-18573)}. |
NASA分類 | ELECTRONIC COMPONENTS AND CIRCUITS |
レポートNO | 94B10618 NPO-19033 |
権利 | No Copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/312982 |