| タイトル | SIMS studies of oxide growth on beta-NiAl |
| 著者（英） | Graham, M. J.; Mitchell, D. F.; Doychak, J.; Prescott, R. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1992-01-01
1992 |
| 言語 | eng |
| 内容記述 | This paper reports on a study of the growth of aluminum oxide on beta-NiAl at temperatures up to 1200 C. The scales have been formed in two-stage experiments using O2-16 and O2-18 gases, and the various isotopic species have been located by direct imaging using SIMS. Supplementary information on oxide morphologies and structures has been obtained by SEM. SIMS images and depth profiles indicate where oxidation has taken place predominantly by cation or anion diffusion at different stages of the growth process. The way in which the presence of small amounts of reactive elements can affect scale growth is also considered. These results help to provide an improved understanding of the mechanism of alumina scale formation, which is of benefit in the development of oxidation-resistant alloys and intermetallics for service at high temperatures. |
| NASA分類 | METALLIC MATERIALS |
| レポートNO | 93A53469 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/314298 |
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