| タイトル | Minority carrier diffusion length and edge surface-recombination velocity in InP |
| 著者（英） | Bailey, Sheila G.; Hakimzadeh, Roshanak |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1993-07-15 |
| 言語 | eng |
| 内容記述 | A scanning electron microscope was used to obtain the electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure the edge surface-recombination velocity. These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (Donolato, 1982) to obtain the electron (minority carrier) diffusion length. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 93A50787 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/314888 |
