| タイトル | Progress in silicon carbide semiconductor technology |
| 著者（英） | Neudeck, P. G.; Matus, L. G.; Powell, J. A.; Petit, J. B. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1992-01-01
1992 |
| 言語 | eng |
| 内容記述 | Silicon carbide semiconductor technology has been advancing rapidly over the last several years. Advances have been made in boule growth, thin film growth, and device fabrication. This paper wi11 review reasons for the renewed interest in SiC, and will review recent developments in both crystal growth and device fabrication. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 93A44965 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/316330 |
