| タイトル | Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at about 2.0 microns |
| 著者（英） | Forouhar, S.; Temkin, H.; Keo, S.; Larsson, A.; Ksendzov, A. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1993-04-01 |
| 言語 | eng |
| 内容記述 | The first low threshold continuous operation of InGaAs strained layer quantum well lasers at about 2.0 microns is reported. The threshold current density of 5-micron wide and 1.5 mm long ridge waveguide lasers was less than 380 A/sq cm. The external differential quantum efficiency of 1 mm long lasers was as high as 15 percent and laser operation was observed at temperatures as high as 50 C. The lasers are characterized by T(0) = 54 C which is the highest characteristic temperature ever achieved at this wavelength in any material system. |
| NASA分類 | LASERS AND MASERS |
| レポートNO | 93A38786 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/317423 |
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