| タイトル | Deposition temperature dependence of the deep defect density for a-Si:H films grown by electron cyclotron resonance microwave plasma |
| 著者（英） | Shing, Y. H.; Essick, J. M.; Pool, F. S. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1992-06-01 |
| 言語 | eng |
| 内容記述 | The dependence on deposition temperature of the mobility gap density of states has been determined for hydrogenated amorphous silicon (a-Si:H) films grown by electron cyclotron resonance (ECR) microwave plasma CVD. A minimum in the integrated deep defect density of 1 x 10 exp 16/cu cm was found to occur at a temperature of approximately 250 C, while an Urbach slope minimum of 52 meV was observed at 175 C under our deposition conditions. Based on these measurements the ECR-grown films were found to be of excellent device quality and comparable to a-Si:H films grown by RF plasma-enhanced CVD. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 93A38474 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/317468 |
