| タイトル | A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device |
| 著者（英） | Mena, Rafael A.; Alterovitz, Samuel A.; Young, Paul G.; Romanofsky, Robert R.; Smith, Edwyn D. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1993-04-01 |
| 言語 | eng |
| 内容記述 | A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 93A37574 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/317639 |
