| タイトル | Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor |
| 著者（英） | Power, Michael B.; Jenkins, Phillip P.; Macinnes, Andrew N.; Hepp, Aloysius F.; Barron, Andrew R. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1993-02-15 |
| 言語 | eng |
| 内容記述 | A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 93A26930 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/319900 |
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