タイトル | Subsurface Growth Of Silicide Structures In Silicon |
著者(英) | Schowalter, Leo; George, Thomas; Pike, William T.; Fathauer, Robert W. |
著者所属(英) | Jet Propulsion Lab., California Inst. of Tech. |
発行日 | 1993-11-01 |
言語 | eng |
内容記述 | Technique shows promise for fabrication of novel electronic, optoelectronic, and electro-optical devices. Experiments demonstrated feasibility of growing microscopic single-crystal CoSi2 structures beneath surfaces of Si substrates. |
NASA分類 | FABRICATION TECHNOLOGY |
レポートNO | 93B10732 NPO-18625 NPO-18624 |
権利 | No Copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/323070 |
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