| タイトル | Subsurface Growth Of Silicide Structures In Silicon |
| 著者（英） | Schowalter, Leo; George, Thomas; Pike, William T.; Fathauer, Robert W. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1993-11-01 |
| 言語 | eng |
| 内容記述 | Technique shows promise for fabrication of novel electronic, optoelectronic, and electro-optical devices. Experiments demonstrated feasibility of growing microscopic single-crystal CoSi2 structures beneath surfaces of Si substrates. |
| NASA分類 | FABRICATION TECHNOLOGY |
| レポートNO | 93B10732
NPO-18625
NPO-18624 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/323070 |
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