| タイトル | Radiation and temperature effects in heteroepitaxial and homoepitaxial InP cells |
| 著者（英） | Swartz, C. K.; Curtis, H. B.; Brinker, D. J.; Jenkins, P. P.; Weinberg, I.; Faur, M. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1991-01-01 |
| 言語 | eng |
| 内容記述 | Heteroepitaxial (InP/GaAs) and homo-epitaxial (InP/InP) cells were irradiated by 1-MeV electrons and their performance, temperature dependencies and carrier removal rates determined. The radiation resistances of the InP/GaAs cells were significantly higher than that of the InP/InP cells. This was attributed to the high dislocation density present in the heteroepitaxial cells. In addition, the effects of dislocations in these latter cells were dominant in determining the temperature dependence of open-circuit voltage. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 92A53192 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/324573 |
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