| タイトル | Modeling of planar varactor frequency multiplier devices with blocking barriers |
| 著者（英） | Frerking, Margaret A.; Tolmunen, T. J.; Lieneweg, Udo; Maserjian, Joseph |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech.; NASA Headquarters |
| 発行日 | 1992-05-01 |
| 言語 | eng |
| 内容記述 | Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 92A46074 |
| 権利 | Copyright |
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