| タイトル | Reactions of silicon carbide and silicon(IV) oxide at elevated temperatures |
| 著者（英） | Fox, Dennis S.; Lee, Kang N.; Jacobson, Nathan S. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1992-06-01 |
| 言語 | eng |
| 内容記述 | The reaction between SiC and SiO2 has been studied in the temperature range 1400-1600 K. A Knudsen cell in conjunction with a vacuum microbalance and a high-temperature mass spectrometer was used for this study. Two systems were studied - 1:1 SiC (2 wt pct excess carbon) and SiO2; and 1:1:1 SiC, carbon, and SiO2. In both cases the excess carbon forms additional SiC within the Knudsen cell and adjusts to the direct reaction of stoichiometric SiC and SiO2 to form SiO(g) and CO(g) in approximately a 3:1 ratio. These results are interpreted in terms of the Si-C-O stability diagram. |
| NASA分類 | NONMETALLIC MATERIALS |
| レポートNO | 92A43483 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/326364 |
