| タイトル | Model for oxygen recombination on silicon-dioxide surfaces. II - Implications toward reentry heating |
| 著者（英） | Jumper, E. J.; Seward, W. A. |
| 著者所属（英） | NASA Headquarters |
| 発行日 | 1992-01-01 |
| 言語 | eng |
| 内容記述 | This paper briefly reviews the model for recombination of oxygen on a silicon-dioxide surface presented in detail in a previous paper. New data supporting the model is also presented. The ramifications of the model toward the production of excited molecular oxygen is examined as it pertains to surface heating. A reentry simulation is given and compared to STS-2 reentry data, and conclusions are drawn as to the implications of the recombination model toward reentry heating. A possible buffering of the heating above a critical temperature associated with the physics of the model is also discussed. |
| NASA分類 | INORGANIC AND PHYSICAL CHEMISTRY |
| レポートNO | 92A29586
AIAA PAPER 92-0811 |
| 権利 | Copyright |
