タイトル | Tunnel injection transit-time diodes for W-band power generation |
著者(英) | Kidner, C.; Haddad, G. I.; Eisele, H. |
著者所属(英) | NASA Headquarters |
発行日 | 1992-02-27 |
言語 | eng |
内容記述 | GaAs p(+ +)n(+)n(-)n(+) single-drift tunnel injection transit-time (TUNNETT) diodes for W-band operation have been successfully designed and tested. An output power of 32 mW at 93.5 GHz with a dc to RF conversion efficiency of 2.6 percent was obtained. The oscillations have a clean spectrum in a conventional waveguide cavity. |
NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
レポートNO | 92A29013 |
権利 | Copyright |
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