| タイトル | A 128 x 128 InGaAs detector array for 1.0 - 1.7 microns |
| 著者（英） | Ackley, D.; Olsen, G.; Erickson, G.; Gay, D.; Woodruff, K.; Mykietyn, E.; Lange, M.; Joshi, A.; Ban, V.; Staller, C. |
| 著者所属（英） | EPITAXX, Inc.|Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1990-01-01 |
| 言語 | eng |
| 内容記述 | A two-dimensional 128 x 128 detector array for the 1.0 - 1.7 micron spectral region has been demonstrated with indium gallium arsenide. The 30 micron square pixels had 60 micron spacing in both directions and were designed to be compatible with a 2D Reticon multiplexer. Dark currents below 100 pA, capacitance near 0.1 pF, and quantum efficiencies above 80 percent were measured. Probe maps of dark current and quantum efficiency are presented along with pixel dropout data and wafer yield which was as high as 99.89 percent (7 dropouts) in an area of 6528 pixels and 99.37 percent (103 dropouts) over an entire 128 x 128 pixel region. |
| NASA分類 | INSTRUMENTATION AND PHOTOGRAPHY |
| レポートNO | 92A21456 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/329921 |
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