| タイトル | The growth and characterization of Al(x)Ga(1-x)As/Ge heterostructures |
| 著者（英） | Colpitts, T. S.; Bachmann, K. J.; Posthill, J. B.; Choi, S. W.; Timmons, M. L. |
| 著者所属（英） | North Carolina State Univ.|Research Triangle Inst. |
| 発行日 | 1992-01-01 |
| 言語 | eng |
| 内容記述 | The effects of the growth temperature and the Al(x)Ga(1-x)As layer thickness on the structural, optical, and electrical properties of Al(x)Ga(1-x)As/Ge heterostructures grown for photovoltaic applications were investigated using different-thickness (between 1 micron and 5 microns) Al(x)Ga(1-x)As layers grown by MOCVD in the temperature range between 660 and 780 C. Results obtained from double-crystal X-ray rocking curve measurements, electron beam induced current, cross-sectional TEM, Raman spectroscopy, SIMS, and steady-state and time-resolved photoluminescence measurements are presented. It was found that the highest minority carrier lifetime, 2.41 ns, was obtained for T(G) = 780 C, but the lowest interfacial recombination velocity, 1.6 x 10 exp 4, was obtained at 660 C. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 92A21149 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/329975 |
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