| タイトル | Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon |
| 著者（英） | Fan, W. C.; Sega, R.; Robin, T.; Mesarwi, A.; Ignatiev, A.; Wu, N. J.; Espoir, L. |
| 著者所属（英） | Houston Univ.|NASA Johnson Space Center |
| 発行日 | 1991-10-28 |
| 言語 | eng |
| 内容記述 | SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 92A11948 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/331496 |
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