| タイトル | Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography |
| 著者（英） | Stahle, C. M.; Teufel, J.; Stevenson, T. R.; Schoelkopf, R. J.; Rhee, K. W.; Li, M. J.; Hsieh, W.-T. |
| 著者所属（英） | NASA Goddard Space Flight Center |
| 発行日 | 2002-01-01 |
| 言語 | eng |
| 内容記述 | This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions. |
| NASA分類 | Electronics and Electrical Engineering |
| 権利 | No Copyright |
|
