| タイトル | Oxidation Behavior of HfB2-SiC Materials in Dissociated Environments |
| 著者（英） | Gasch, Matthew; Beckman, Sarah; Johnson, Sylvia M.; Ellerby, Don; Irby, Edward; Gusman, Michael |
| 著者所属（英） | NASA Ames Research Center |
| 発行日 | 2002-11-20 |
| 言語 | eng |
| 内容記述 | Hafnium diboride based materials have shown promise for use in extremely high temperature applications, such as sharp leading edges on future reentry vehicles. During reentry, the oxygen and nitrogen in the atmosphere are dissociated by the shock layer ahead of the sharp leading edge such that surface reactions are determined by reactions of monatomic oxygen and nitrogen rather than O2, and N2. Simulation of the reentry environment on the ground requires the use of arc jet (plasma jet) facilities that provide monatomic species and are the closest approximation to actual flight conditions. Simple static or flowing oxidation studies under ambient pressures and atmospheres are not adequate to develop an understanding of a materials behavior in flight. Arc jet testing is required to provide the appropriate stagnation pressures, heat fluxes, enthalpies, heat loads and atmospheres encountered during flight. This work looks at the response of HfB2/SiC materials exposed to various simulated reentry environments. |
| NASA分類 | Chemistry and Materials (General) |
| 権利 | No Copyright |
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