| タイトル | Characterizing Thermal Properties of Melting Te Semiconductor: Thermal Diffusivity Measurements and Simulation |
| 著者（英） | Zhu, Shen; Lehoczky, S. L.; Curreri, Peter A.; Lin, B.; Li, C.; Ben, H.; Su, Ching-Hua; Scripa, R. N. |
| 著者所属（英） | NASA Marshall Space Flight Center |
| 発行日 | 2002-01-01 |
| 言語 | eng |
| 内容記述 | Tellurium is an element for many II-VI and I-III-VI(sub 2) compounds that are useful materials for fabricating many devices. In the melt growth techniques, the thermal properties of the molten phase are important parameter for controlling growth process to improve semiconducting crystal quality. In this study, thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range from 500 C to 900 C. A pulsed laser with 1064 nm wavelength is focused on one side of the measured sample. The thermal diffusivity can be estimated from the temperature transient at the other side of the sample. A numerical simulation based on the thermal transport process has been also performed. By numerically fitting the experimental results, both the thermal conductivity and heat capacity can be derived. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. The error analysis and the comparison of the results to published data measured by other techniques will be discussed. |
| NASA分類 | Solid-State Physics |
| 権利 | No Copyright |
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