Technical Report of ISSP Ser. A: Number 2658

Abstract

By applying pulsed high magnetic fields up to 40 T perpendicular (B(sub perpendicular)) and parallel (B(sub parallel) is parallel to I) to the current direction, a distinct role of emitter states in the magneto-tunneling processes through resonant tunneling diodes has been investigated. The B(sub perpendicular) dependence of the threshold voltage in current vs. Voltage (one - five) curves has been explained consistently by tunneling from a combined magneto-electric state of a one-dimensional (1 D) emitter to that of a zero-dimensional (0 D) m well state. A drastic current decrease above B(sub parallel) = 10 T under constant applied voltage below the negative differential conductivity region together with multi-peaked one - five curves with hysteresis at above B(sub parallel) = 30 T was observed. These distinct features were analyzed by a self-consistent model of the charge build-up effect and the energy configuration of the 0 D emitter, 1 D emitter and 0 D well states.

共鳴トンネルダイオードに電流方向に垂直(B sub perpendicular)および平行(B sub parallel//I)な40Tまでのパルス高磁場を印加して、磁気トンネリング過程におけるエミッタ状態の明瞭な役割を調べた。電流電圧(1-5)曲線におけるしきい値電圧のB sub perpendicular依存性を、1次元(1D)をエミッタの結合磁気-電気状態から0次元(0D)井戸状態の結合磁気-電気状態へのトンネリングにより一貫して説明した。B sub parallel=30T以上でヒステリシスがある多ピーク1-5曲線により、負の微分電導率領域以下で一定印加電圧の下で、B sub parallel=約10T以上での急激な電流減少を観測した。これらの明瞭な特微を、電荷蓄積効果のセルフコンシステントモデルおよび0Dエミッタ、1Dエミッタおよび0D井戸状態のエネルギー閉込めにより解析した。