| タイトル | Investigation of Nitride Morphology After Self-Aligned Contact Etch |
| 著者（英） | Kim, J.; Keil, J.; Biegel, Bryan; Gopaladasu, P.; Hwang, Helen H.; Shon, J.; Chien, T.; Helmer, B. A. |
| 著者所属（英） | NASA Ames Research Center |
| 発行日 | 2001-04-29 |
| 言語 | eng |
| 内容記述 | Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles. |
| NASA分類 | Computer Operations and Hardware |
| 権利 | No Copyright |
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