| タイトル | The Preparation Conditions of Chromium Doped ZnSe and Their Effect on the Infrared Luminescence Properties |
| 著者（英） | Ndap, J.-O.; Burger, A.; Chattopadhyay, K.; Ma, X.; Morgan, S. H.; Feth, S.; Rablau, C. I.; Su, C. H. |
| 著者所属（英） | NASA Marshall Space Flight Center |
| 発行日 | 2000-01-01 |
| 言語 | eng |
| 内容記述 | We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the physical vapor transport method. Room temperature lifetime values between 6 and 8 micro seconds were measured for samples with Cr2+ from low 10(exp 17) to high 10(exp 18) / cubic cm range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10(exp 19) / cubic CM. |
| NASA分類 | Solid-State Physics |
| 権利 | No Copyright |
|
