| タイトル | Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition |
| 著者（英） | Daniels-Race, T.; Lum, R. M.; Greene, A. L.; Williams, M. D. |
| 著者所属（英） | Clark-Atlanta Univ. |
| 発行日 | 2000-01-01
2000 |
| 言語 | eng |
| 内容記述 | Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared. |
| NASA分類 | Solid-State Physics |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/340671 |
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