| タイトル | Orientation Effects in ZnO Films Using Off-Axis Sputtering Deposition |
| 著者（英） | Lehoczky, S.; Su, Ching-Hua; Zhu, Shen; George, M. A. |
| 著者所属（英） | NASA Marshall Space Flight Center |
| 発行日 | 1999-01-01
1999 |
| 言語 | eng |
| 内容記述 | ZnO is a wide-band-gap oxide material and has been used in numerous applications. It is also a good substrate for fabricating GaN-based (a blue laser candidate) devices. Off-axis sputtering technique is one of the best techniques in synthesizing oxide materials because negative ion bombardment and particle kinetic energy is greatly reduced when adatoms condense on substrates. Since the sputtered material from the target arrive on the substrate surface at a 90 deg. configuration, which differs from the normal sputtering geometry, it is expected that the film uniformity and composition distributions will be affected. However, the details of these properties and mechanisms have not been well studied. ZnO films are synthesized on (0001) sapphire and quartz substrates by off-axis sputtering deposition in various oxygen/argon mixture ratios and pressures at different temperatures. Substrates and sputtering sources are placed at three different orientations that are orthogonal to each other. The normal direction of a substrate is parallel to the gravity vector and the other is perpendicular to it. Film thickness profiles at different growth orientations are determined using a profimeter. All films grown at high temperatures have highly textured structures on quartz substrates and epitaxially grow on sapphire substrates. Because of this process, the film surface is very smooth. X-ray diffraction, scanning probe microscopy, and Fourier transfer infrared spectroscopy, and electrical measurements will be used to characterize these films. Detailed results will be discussed in the presentation. |
| NASA分類 | Nonmetallic Materials |
| 権利 | Copyright |
|
