| タイトル | Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices |
| 著者（英） | Stan, Mark A.; Buhro, William E.; Jenkins. Philip P.; Hepp, Aloysius F.; Hollingsworth, Jennifer A. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1998-01-01
1998 |
| 言語 | eng |
| 内容記述 | Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV. |
| NASA分類 | Energy Production and Conversion |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/343946 |
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