| タイトル | Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz |
| 著者（英） | Kapoor, Vik J.; Biedenbender, Michael D.; Messick, Louis J.; Schmitz, Dietmar; Shalkhauser, Kurt A.; Nguyen, Richard; Jurgensen, Holger |
| 著者所属（英） | Cincinnati Univ.|Naval Ocean Systems Center|NASA Lewis Research Center |
| 発行日 | 1991-08-01 |
| 言語 | eng |
| 内容記述 | The microwave characteristics are presented at 18 and 20 GHz of submicron gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications. InP power MISFET's were fabricated and the output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacing of 3 micron. The output power density is 2.7 times greater than was previously measured for InP MISFET's at 18 and 20 GHz, and the power-added efficiency also increased. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 91A54526 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/345309 |
