| タイトル | Indium gallium arsenide microwave power transistors |
| 著者（英） | Kapoor, Vik J.; Johnson, Gregory A.; Shokrani, Mohsen; Nguyen, Richard; Messick, Louis J. |
| 著者所属（英） | Cincinnati Univ.|Naval Ocean Systems Center |
| 発行日 | 1991-07-01 |
| 言語 | eng |
| 内容記述 | Depletion-mode InGaAs microwave power MISFETs with 1-micron gate lengths and up to 1-mm gate widths have been fabricated using an ion-implantation process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The dc I-V characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W with a corresponding power gain and power-added efficiency of 4.3 dB and 38 percent, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, output power stability within 1.2 percent over 24 h of continuous operation was achieved. In addition, a drain current drift of 4 percent over 10,000 sec was obtained. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 91A48170 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/346358 |
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