| タイトル | Measurement of surface recombination velocity on heavily doped indium phosphide |
| 著者（英） | Jenkins, Phillip; Ghalla-Goradia, Manju; Faur, Mircea; Bailey, Sheila; Faur, Maria |
| 著者所属（英） | NASA Lewis Research Center|Cleveland State Univ. |
| 発行日 | 1990-01-01 |
| 言語 | eng |
| 内容記述 | Surface recombination velocity (SRV) on heavily doped n-type and p-type InP was measured as a function of surface treatment. For the limited range of substrates and surface treatments studied, SRV and surface stability depend strongly on the surface treatment. SRVs of 100,000 cm/sec in both p-type and n-type InP are obtainable, but in n-type the low-SRV surfaces were unstable, and the only stable surfaces on n-type had SRVs of more than 10to the 6th cm/sec. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 91A41931 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/347512 |
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