| タイトル | Effects of transistor geometry on CCD output sensitivity |
| 著者（英） | Blouke, Morley M.; Heidtmann, D. L.; Kim, H. |
| 著者所属（英） | Tektronix, Inc. |
| 発行日 | 1990-01-01 |
| 言語 | eng |
| 内容記述 | This paper discusses recent progress in the understanding of the fabrication of low noise floating diffusion output amplifiers for special purpose charge-coupled devices. Emphasis has been given to reducing the total node capacitance and increasing the output sensitivity. Measurements of noise on experimental devices has yielded noise less than 3 electrons rms at 50 kpixel data rate. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 91A37544 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/348207 |
|
