| タイトル | High-frequency resonant-tunneling oscillators |
| 著者（英） | Manfra, M. J.; Brown, E. R.; Chen, C. L.; Calawa, A. R.; Parker, C. D. |
| 著者所属（英） | Massachusetts Inst. of Tech. |
| 発行日 | 1991-01-05 |
| 言語 | eng |
| 内容記述 | Advances in high-frequency resonant-tunneling-diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. Recent results obtained with In0.53Ga0.47As/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz. These results are consistent with a lumped-element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by series resistance, and that the power density is limited by low peak-to-valley current ratio. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 91A26007 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/350049 |
