| タイトル | Growth and characterization of CdS crystals |
| 著者（英） | Su, Ching-Hua; Szofran, F. R.; Lehoczky, S. L. |
| 著者所属（英） | NASA Marshall Space Flight Center |
| 発行日 | 1990-04-01 |
| 言語 | eng |
| 内容記述 | A growth method for the physical vapor transport of compound semiconductors in closed ampoules is described. With the unique techniques applied in the heat treatment of the starting materials and the temperature profiles provided by the three-zone translational furnace, large crystals of CdS have been grown successfully by the method at lower temperatures than previously used. Both unseeded and seeded growth have been investigated. The CdS crystals were examined using optical and scanning electron microscopies (SEM) to study the microstructure and the dislocation etch-pits. The crystals were further characterized by infrared (IR) and ultraviolet (UV) transmission measurements. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 91A21686 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/350578 |
