| タイトル | Impact ionization in the base of a hot-electron AlSb/InAs bipolar transistor |
| 著者（英） | Vengurlekar, Arvind S.; Capasso, Federico; Chiu, T. Heng |
| 著者所属（英） | Bell Telephone Labs., Inc.|Bell Telephone Labs., Inc. |
| 発行日 | 1990-10-22 |
| 言語 | eng |
| 内容記述 | The operation of a new AlSb/InAs heterojunction bipolar transistor is studied. The electrons are injected into a p-InAs base across the AlSb/InAs heterojunction. The conduction-band discontinuity at this heterojunction is sufficiently large so that energy of the electrons injected into InAs exceeds the threshold for generating electron-hole pairs by impact ionization. The observed incremental common base current at zero collector-base bias decreases and becomes negative as the emitter current is increased, thus providing direct evidence for impact ionization entirely by band-edge discontinuities. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 91A12268 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/352269 |
