| タイトル | Concepts for thin-film GaAs concentrator cells |
| 著者（英） | Mcclelland, R.; Dingle, J.; Spitzer, M. B.; King, B.; Gale, R. P. |
| 著者所属（英） | Kopin Corp. |
| 発行日 | 1989-01-01 |
| 言語 | eng |
| 内容記述 | The development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns. |
| NASA分類 | SPACECRAFT PROPULSION AND POWER |
| レポートNO | 90A38147 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/355767 |
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