| タイトル | Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy |
| 著者（英） | Hashimoto, Shin; Xiao, Q. F.; Fathauer, R. W.; Nieh, C. W. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech.|California Inst. of Tech.|State Univ. of New York |
| 発行日 | 1990-01-01 |
| 言語 | eng |
| 内容記述 | Codeposition of silicon and cobalt on heated silicon substrates in ratios several times the silicide stoichiometry is found to result in epitaxial columns of CoSi2 surrounded by a matrix of epitaxial silicon. For (111)-oriented wafers, nearly cylindrical columns are formed, where both columns and surrounding silicon are defect free, as deduced from transmission electron microscopy. Independent control of the column diameter and separation is possible, and diameters of 27-135 nm have been demonstrated. |
| NASA分類 | NONMETALLIC MATERIALS |
| レポートNO | 90A33318 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/356533 |
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