| タイトル | Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers |
| 著者（英） | Powell, J. A.; Larkin, D. J.; Matus, L. G.; Choyke, W. J.; Bradshaw, J. L. |
| 著者所属（英） | NASA Lewis Research Center|Pittsburgh Univ. |
| 発行日 | 1990-04-09 |
| 言語 | eng |
| 内容記述 | Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used alpha-SiC crystal substrates. The CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process is reported. The single-crystal 6H-SiC films were grown on wafers oriented 3 to 4 deg off the (0001) plane toward the 11-20 direction. The films, up to 12 microns thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 90A29952 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/357034 |
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