| タイトル | Growth of improved quality 3C-SiC films on 6H-SiC substrates |
| 著者（英） | Larkin, D. J.; Powell, J. A.; Bradshaw, J. L.; Matus, L. G.; Choyke, W. J. |
| 著者所属（英） | NASA Lewis Research Center|Pittsburgh Univ. |
| 発行日 | 1990-04-02 |
| 言語 | eng |
| 内容記述 | Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). It is found that growth on as-grow faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 microns thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 90A29596 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/357100 |
|
