| タイトル | Ballistic electron emission microscopy and spectroscopy of Au/GaAs interfaces |
| 著者（英） | Hecht, M. H.; Bell, L. D.; Kaiser, W. J.; Grunthaner, F. J. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1989-08-01 |
| 言語 | eng |
| 内容記述 | This paper presents the first Schottky barrier results for the Au/GaAs(100) interface prepared completely in situ on GaAs grown by molecular-beam epitaxy. The resulting interface displays unexpected properties which can be interpreted in terms of enhanced electrode interdiffusion. In addition, the capability of molecular-beam epitaxy for in situ processing enables the stabilization of this interface against diffusion and allows the formation of a Au/GaAs system with nearly ideal properties. Newly developed ballistic electron spectroscopy and imaging techniques demonstrate that the heterogeneity present at the interface of Au/GaAs(100) fabricated on chemically treated GaAs substrates is removed. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 90A24019 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/358168 |
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