| タイトル | Parametric amplification in AgGaSe2 |
| 著者（英） | Barnes, Norman P.; Hietanen, Jack R.; Iannini, Rebecca A.; Gettemy, Donald J. |
| 著者所属（英） | Los Alamos National Lab.|NASA Langley Research Center|Cleveland Crystals, Inc. |
| 発行日 | 1989-12-01 |
| 言語 | eng |
| 内容記述 | AgGaSe2 has been grown, annealed, and characterized for the mid-IR. Characterization includes measurement of the average power-limiting factors including absorption and the variation of the refractive indices with temperature. Using specially annealed crystals 20 mm long and a Ho:YAG pump, parametric amplification at 3.39 microns has achieved a gain of 2.9 with a peak power input of only 8 MW/sq cm. |
| NASA分類 | LASERS AND MASERS |
| レポートNO | 90A18196 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/359210 |
|
