| タイトル | Growth of single-crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy |
| 著者（英） | Nieh, C. W.; Hashimoto, Shin; Fathauer, R. W.; Xiao, Q. F. |
| 著者所属（英） | State Univ. of New York|Jet Propulsion Lab., California Inst. of Tech.|California Inst. of Tech. |
| 発行日 | 1989-07-17 |
| 言語 | eng |
| 内容記述 | The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by an Si matrix which shows bulk-like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 89A47734 |
| 権利 | Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/362098 |
